| PART |
Description |
Maker |
| PBRP113ET |
PNP 800 mA, 40 V BISS RET; R1 = 1 kOhm, R2 = 1 kOhm
PNP 800 mA, 40 V BISS RET; R1 = 1 kW, R2 = 1 kW
|
NXP Semiconductors
|
| PBSS5250T PBSS5250T215 |
50 V; 2 A PNP low VCEsat (BISS) transistor; Package: SOT23 (TO-236AB); Container: Tape reel smd 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
50 V, 2 A PNP low VCEsat (BISS) transistor
50 V 2 A PNP low VCEsat (BISS) transistor
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| 2PB1424 2PB1424115 |
20 V, 3 A PNP low VCEsat (BISS) transistor 20伏，3安PNP型低饱和压降（BISS）晶体管
|
NXP Semiconductors N.V.
NXP Semiconductors / Philips Semiconductors
|
| PBRN113Z PBRN113ZK PBRN113ZS PBRN113ZT |
NPN 800 mA, 40 V BISS RETs; R1 = 1 kOhm, R2 = 10 kOhm
NPN 800 mA, 40 V BISS RETs; R1 = 1 k? R2 = 10 k?
NPN 800 mA, 40 V BISS RETs; R1 = 1 k搂?, R2 = 10 k搂?
|
NXP Semiconductors
|
| PBSS5560PA PBSS5560PA-15 |
60 V, 5 A PNP low V_CEsat (BISS) transistor 5000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR
60 V, 5 A PNP low VCEsat (BISS) transistor
|
NXP Semiconductors
|
| PBSS4350SPN PBSS4350SPN115 PBSS4350SPN-15 |
50 V, 2.7 A NPN-PNP low VCEsat (BISS) transistor
50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistor; Package: SOT96-1 (SO8); Container: Tape reel smd
|
NXP Semiconductors N.V.
|
| PBSS5520X PBSS5520X-15 |
20 V, 5 A PNP low VCEsat (BISS) transistor 20伏，5安PNP型低饱和压降BISS）晶体管
20 V, 5 A PNP low VCEsat (BISS) transistor
PNP low VCEsat (BISS) transistor 20 V, 5 A
|
NXP Semiconductors N.V.
|
| PBSS5130PAP |
30 V, 1 A PNP/PNP low VCEsat (BISS) transistor
|
NXP Semiconductors
|
| PBLS1501V PBLS1501Y |
15 V PNP BISS loadswitch
|
NXP Semiconductors N.V.
|
| PBLS2001S |
20 V PNP BISS loadswitch
|
NXP Semiconductors
|
| PBLS4004V PBLS4004Y |
40 V PNP BISS loadswitch
|
NXP Semiconductors
|
|
